Application and Research of the Automated System for the Photovoltaic Grinding and Polishing Machine

Precision breakthrough: The processing edge tolerance is ±0.05mm, the surface roughness Ra is ≤0.1μm, reaching the international advanced level.

Thin sheet support: Stable processing of 110μm silicon wafers, with a fragment rate of <0.2%, supporting the mass production of HJT batteries.

Intelligent upgrade: The algorithm enables equipment self-diagnosis, reducing the failure rate by 40% and extending the maintenance cycle to 2000 hours.

The equipment is equipped with the NX series PLC motion controller, 13-axis servo drive control, and probes. It is used for arc or corner, and surface integrated polishing of single and multi-crystal silicon rods of different specifications after being squared. At the same time, it can also have functions for rough grinding, fine grinding, single surface, and single arc processing separately.

Thinning: The thickness of silicon wafers has evolved from 180 μm to 110 μm and even 80 μm, which places higher demands on the stress control in the grinding and polishing process.

Large-scale: G12 (210mm) silicon wafers have become the mainstream, and the equipment needs to be compatible with the stable transmission and processing accuracy of large-sized silicon wafers.

N-type cells are popularized, and TOPCon and HJT cells require the surface roughness (Ra value) of the silicon wafer to be ≤ 0.2 μm. Traditional split-type equipment is unable to meet these requirements.